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United States of America Patent

SERIAL NO

14868413

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Abstract

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A method for forming a layer of material on a silicon layer comprises depositing a layer of silicon material having a hydrophobic H-terminated surface on a substrate, forming a hydrophilic seed layer on the surface of the silicon material, and depositing an oxide material layer on the hydrophilic seed layer.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ando, Takashi Tuckahoe, US 718 5576
Frank, Martin M Dobbs Ferry, US 125 1460
Narayanan, Vijay New York, US 308 5568
Rozen, John Hastings on Hudson, US 56 267

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