Semiconductor Device and Method
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United States of America Patent
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Sep 28, 2016
filing date -
Sep 29, 2015
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Abstract
In an embodiment, a semiconductor device includes a substrate, a plurality of columnar drift zones including a group III-nitride having a first conductivity type and a plurality of charge compensation structures. The columnar drift zones and the compensation structures are positioned alternately on a surface of the substrate.
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