Dielectric isolated SiGe fin on bulk substrate

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United States of America Patent

PATENT NO 9941175
SERIAL NO

15288017

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Abstract

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A method for forming fins on a semiconductor device includes etching trenches into a monocrystalline substrate to form first fins and forming a first dielectric layer at bottoms of the trenches. Second fins of a material having a different composition than the substrate are grown on sidewalls of the trenches. A second dielectric layer is formed over the second fins. The first fins are removed by etching. The second fins are processed to form fin field effect transistor devices.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bu, Huiming Millwood, US 108 1082
Mochizuki, Shogo Clifton Park, US 296 1871
Yamashita, Tenko Schenectady, US 599 4947

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