ESD device compatible with bulk bias capability
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United States of America Patent
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Jun 6, 2017
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N/A
app pub date -
Oct 2, 2015
filing date -
Oct 2, 2015
priority date (Note) -
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Abstract
A device having an electrostatic discharge structure includes a bulk substrate having a first dopant conductivity, first wells formed adjacent to a surface of the bulk substrate, including a second dopant conductivity, and second wells formed adjacent to the surface of the bulk substrate within the first wells, including the first dopant conductivity. A supply bus is formed in one of the first wells outside the second well. A ground bus has a first portion formed in another first well outside the second well, and a second portion is formed inside the second well such that a charge input to the second wells is dissipated without accumulating in the bulk substrate.
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