Design Based Sampling and Binning for Yield Critical Defects

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United States of America Patent

SERIAL NO

15389442

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Abstract

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Methods and systems for design based sampling and binning for yield critical defects are provided. One method includes aligning each image patch in each inspection image frame generated for a wafer by an optical subsystem of an inspection system to design information for the wafer. The method also includes deriving multiple layer design attributes at locations of defects detected in the image patches. In addition, the method includes building a decision tree with the multiple layer design attributes. The decision tree is used to separate the defects into bins with different yield impacts on a device being formed on the wafer. The method also includes binning the defects with the decision tree.

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Patent Owner(s)

Patent OwnerAddress
KLA-TENCOR CORPORATIONONE TECHNOLOGY DRIVE MILPITAS CA 95035

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Babulnath, Raghav San Jose, US 11 33
Gao, Lisheng Morgan Hill, US 58 638
Kurada, Satya Fremont, US 6 15
Ng, Kwok Milpitas, US 10 92

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