SWITCHING DEVICE WITH CHARGE DISTRIBUTION STRUCTURE
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United States of America Patent
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app pub date -
Dec 22, 2016
filing date -
Jun 29, 2012
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Abandoned
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Abstract
A semiconductor device includes a substrate and a first active layer disposed over the substrate. The semiconductor device also includes a second active layer disposed on the first active layer such that a lateral conductive channel arises between the first active layer and the second active layer. a source, gate and drain contact are disposed over the second active layer. A conductive charge distribution structure is disposed over the second active layer between the gate and drain contacts. The conductive charge distribution structure is capacitively coupled to the gate contact.
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