DOPING AN ABSORBER LAYER OF A PHOTOVOLTAIC DEVICE VIA DIFFUSION FROM A WINDOW LAYER
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United States of America Patent
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Dec 20, 2016
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Mar 2, 2012
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Abstract
Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g,. copper). A p-n heterojunction can be formed on the window layer, with the p-n heterojunction including a photovoltaic material (e.g., cadmium telluride) in an absorber layer. The dopant can then be diffused from the window layer into the absorber layer (e.g., via annealing).
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