PZT THIN FILM LAMINATE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Dec 22, 2016
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Jun 24, 2014
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Abstract
The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a PZT thin film by sputtering, without using a conventional seed layer. The present invention provides a PZT thin film laminate including: a Si substrate 10; a TiOx layer 4 serving as a platinum-adhesion layer on the Si substrate 10; a Pt electrode layer 5 on the TiOx layer 4; a Ti thin film layer 6 on the Pt electrode layer 5; and a PZT thin film layer 7 on the Ti thin film layer 6. The Ti thin film layer 6 can have a thickness of 1 nm or more and 10 nm or less.
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