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Abstract

The present invention relates to a thermoelectric composite in which a thermoplastic polymer constitutes a matrix, and one or more types of electroconductive materials selected from the group consisting of chalcogen materials and chalcogenides are dispersed at grain boundaries between the thermoplastic polymer particles to form a conductive pathway, wherein an average size of the electroconductive materials is smaller than an average size of the thermoplastic polymer particles, the chalcogen materials are one or more substances selected from the group consisting of sulfur (S), selenium (Se), tellurium (Te), and polonium (Po), the chalcogenides are compounds containing one or more chalcogens selected from the group consisting of S, Se, Te, and Po, and the thermoelectric composite has a thermal conductivity of 0.1 to 0.5 W/m·K. The present invention also relates to a method of preparing the thermoelectric composite. According to the present invention, since a conductive pathway, in which electroconductive materials exhibiting a thermoelectric characteristic are in direct contact with one another, is formed in a thermoplastic polymer matrix and the electroconductive materials are disposed at grain boundaries, which are between thermoplastic polymer particles and are desired locations in the thermoplastic polymer matrix, an optimum thermoelectric characteristic can be attained with a minimum amount of the electroconductive materials. Also, the electroconductive materials having a thermoelectric characteristic in the thermoplastic polymer matrix do not restrict electron transfer, and phonon scattering, which occurs during heat transfer, can be maximized.

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First Claim