FABRICATION METHOD OF SEMICONDUCTOR MULTILAYER STRUCTURE
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United States of America Patent
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Jan 3, 2017
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Apr 3, 2015
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Abstract
The present invention is directed to a fabrication method of a semiconductor multilayer structure. By utilizing the indium-containing catalyst and/or gallium-containing catalyst, the aluminum migration can be enhanced to increase quality and flatness of the aluminum contained nitride buffer layer. Furthermore, the costs and energy consumption can be reduced too.
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