DRAM Capacitors and Methods for Forming the Same
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United States of America Patent
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Issued Date -
Apr 27, 2017
app pub date -
Oct 25, 2016
filing date -
Oct 26, 2015
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Abstract
Embodiments provided herein describe capacitor stacks and methods for forming capacitor stacks. A first electrode is formed above a substrate. A dielectric layer is formed above the first electrode. The dielectric layer includes zirconium. A second electrode is formed above the dielectric layer. At least one of the first electrode and the second electrode includes iridium.
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