Semiconductor device and method for manufacturing the same

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United States of America Patent

PATENT NO 10749021
APP PUB NO 20170125571A1
SERIAL NO

15333674

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Abstract

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A GaN-based enhancement-mode power electronic device and a method for manufacturing the same. The GaN-based enhancement-mode power electronic device comprises: a substrate; a thin barrier Al(In,Ga)N/GaN heterostructure formed on the substrate; a gate, a source, and a drain formed on the thin barrier Al(In,Ga)N/GaN heterostructure. An AlN or SiNx passivation layer is formed on access regions between the gate and the source and between the gate and the drain, respectively, such that two dimensional electron gas is recovered in channels of the thin barrier Al(In,Ga)N/GaN heterostructure below the MN passivation layer by utilizing the MN passivation layer having polarization characteristics, or by using the SiNx passivation layer with positive fixed bulk/interface charges, so as to reduce on-resistance of the device and inhibit high-voltage current collapse in the device.

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Patent Owner(s)

Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCESNO 3 BEITUCHENG WEST ROAD CHAOYANG DISTRICT BEIJING 100029

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Sen Beijing, CN 11 24
Liu, Xinyu Beijing, CN 117 460
Wang, Xinhua Beijing, CN 37 159
Wei, Ke Beijing, CN 38 343

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