SEMICONDUCTOR DEVICE HAVING VERTICAL SILICON PILLAR TRANSISTOR
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United States of America Patent
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app pub date -
Jan 25, 2017
filing date -
Oct 7, 2013
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Abstract
A semiconductor device includes a transistor disposed on a substrate, a first insulation layer, a second insulation layer, an epitaxy and a conductive material. The first insulation layer is disposed on the substrate and protruding over the transistor. The first insulation layer has a recess to expose a top portion of the transistor. The second insulation layer is disposed on the first insulation layer and conforms to the recess and exposes the top portion of the transistor. The epitaxy is disposed in the recess of the first insulation layer and overlaps the top portion of the transistor. The epitaxy conforms to sidewalls of the recess of the first insulation layer. The conductive material is disposed in the recess of the first insulation layer. The conductive material is electrically connected to the top portion of the transistor through the epitaxy,
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