Pattern measurement method and pattern measurement device
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United States of America Patent
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Jan 22, 2019
Grant Date -
May 18, 2017
app pub date -
May 11, 2015
filing date -
Jun 30, 2014
priority date (Note) -
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Abstract
The presently disclosed subject matter provides a pattern measurement method and device for achieving highly accurate measurement in the depth direction of a pattern. The method involves a focused ion beam irradiated to form an inclined surface in a sample area; a field of view of a SEM set to include the boundary between the inclined surface and a sample surface; and an image of the field of view obtained on the basis of a detection signal. Such an acquired image is used to specify a first position, the boundary between inclined surface and non-inclined surface, and a second position, the position of a desired deep hole or deep groove positioned within the inclined surface. The pattern dimension in a height direction is determined on the basis of the distance in the sample surface direction between the first position and second position and the angle of the inclined surface.
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