Memory device with manufacturable cylindrical storage node

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United States of America Patent

PATENT NO 9935110
SERIAL NO

15410031

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Abstract

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A high capacitance embedded capacitor and associated fabrication processes are disclosed for fabricating a capacitor stack in a multi-layer stack to include a first capacitor plate conductor formed with a cylinder-shaped storage node electrode formed in the multi-layer stack, a capacitor dielectric layer surrounding the cylinder-shaped storage node electrode, and a second capacitor plate conductor formed from a conductive layer in the multi-layer stack that is sandwiched between a bottom and top dielectric layer, where the cylinder-shaped storage node electrode is surrounded by and extends through the conductive layer.

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Patent Owner(s)

  • CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Rhie, Hyoung Seub Ottawa, CA 36 576

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