Nonvolatile semiconductor storage device and method of manufacturing nonvolatile semiconductor storage device
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United States of America Patent
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Apr 3, 2018
Grant Date -
May 18, 2017
app pub date -
Mar 9, 2016
filing date -
Nov 18, 2015
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Abstract
A nonvolatile semiconductor storage device includes a memory string including a plurality of memory cells connected in series with each other, and a select gate transistor connected to a first end of the memory string. The film thickness of a first hard mask on a select gate electrode of the select gate transistor is greater than the film thickness of a second hard mask film on a control gate electrode of the memory cells. The level of an upper surface of a first side wall insulating film provided on a side surface of the select gate transistor is higher than the level of an upper surface of the first hard mask film. The level of an upper surface of a second side wall insulating film provided on a side surface of the memory cells is higher than the level of an upper surface of the second hard mask film.
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