NITRIDE SEMICONDUCTOR WAFER AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Jan 27, 2017
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Jul 29, 2014
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Provided is a nitride semiconductor wafer in which, above a nitride semiconductor template having a nitride semiconductor layer as a top layer thereof, a light emitting layer having a multiple quantum well structure that is formed by a regrown nitride semiconductor and a p-type nitride semiconductor layer are stacked. Here, when the light emitting layer having a multiple quantum well structure includes a plurality of well layers and one of the well layers that is the closest to the p-type nitride semiconductor layer is referred to as a top well layer, a distance t from a regrowth interface of the nitride semiconductor layer of the nitride semiconductor template to the top well layer is 1 μm or less, and the top well layer has an oxygen concentration of 5.0×1016 cm−3 or less.
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