DYNAMIC RANDOM ACCESS MEMORY CIRCUIT AND VOLTAGE CONTROLLING METHOD THEREOF

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United States of America Patent

SERIAL NO

14949857

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Abstract

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A dynamic random access memory circuit includes several memory cells, several word line drivers and a first voltage generator. The first voltage generator electrically coupled with the word line drivers, and the first voltage generator is configured to generate a first voltage signal to the word line drivers, in which during a self refresh period of the memory cells, the first voltage signal is decreased by the first voltage generator from a first level to a second level.

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Patent Owner(s)

Patent OwnerAddress
NANYA TECHNOLOGY CORPORATIONNO 98 NANLIN RD TAISHAN DIST NEW TAIPEI CITY 243

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, Chih-Jen Kaohsiung City, TW 57 265
HSU, Ting-Shuo New Taipei City, TW 31 21

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