LOW-DAMAGE ETCHING METHOD FOR III-NITRIDE

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United States of America Patent

SERIAL NO

15060406

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Abstract

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A low-damage etching method for a III-Nitride structure is disclosed. The method comprises: forming an etching mask on the III-Nitride structure, which is formed on a substrate; and etching the III-Nitride with the etching mask, wherein a temperature of the substrate changes dynamically or is kept at a constant temperature point between 200° C. and 700° C. during the etching.

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Patent Owner(s)

Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES100029 BEIJING CITY CHAOYANG DISTRICT BEITUCHENG WEST ROAD NO 3 CHINESE ACADEMY OF SCIENCES INSTITUTE OF MICROELECTRONICS MUNICIPAL DISTRICT BEIJING CITY 100029

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HUANG, Sen Beijing, CN 8 7
LIU, Xinyu Beijing, CN 77 166
WANG, Xinhua Beijing, CN 24 78
WEI, Ke Beijing, CN 28 287

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