METHODS FOR PRODUCING INTEGRATED CIRCUITS WITH AIR GAPS AND INTEGRATED CIRCUITS PRODUCED FROM SUCH METHODS
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United States of America Patent
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Jun 8, 2017
app pub date -
Dec 3, 2015
filing date -
Dec 3, 2015
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Abstract
Methods for producing integrated circuits and integrated circuits produced by such methods are provided. In an exemplary embodiment, a method for producing an integrated circuit includes forming a base dielectric layer overlying a substrate. A sacrificial layer is formed overlying the base dielectric layer, and adjacent conductive components are formed in the sacrificial layer where the adjacent conductive components are physically separated by material of the sacrificial layer. The sacrificial layer is removed such that an air gap is defined between the adjacent conductive components, where the air gap overlies the base dielectric layer. A cap dielectric layer is formed overlying the base dielectric layer and the air gap to enclose the air gap within the integrated circuit.
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