Nanometer semiconductor devices having high-quality epitaxial layer

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United States of America Patent

PATENT NO 10475935
APP PUB NO 20170162714A1
SERIAL NO

15371431

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Abstract

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There are provided a nanometer semiconductor device with a high-quality epitaxial layer and a method of manufacturing the same. According to an embodiment, the semiconductor device may include: a substrate; at least one nanowire spaced apart from the substrate; at least one semiconductor layer, each formed around a periphery of respective one of the at least one nanowire to at least partially surround the corresponding nanowire, wherein the semiconductor layer(s) formed around the respective nanowire(s) are separated from each other; an isolation layer formed on the substrate, exposing the at least one semiconductor layer; and a gate stack formed on the isolation layer and intersecting the at least one semiconductor layer, wherein the gate stack includes a gate dielectric layer at least partially surrounding a periphery of respective one of the at least one semiconductor layer and a gate conductor layer.

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Patent Owner(s)

  • INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Zhu, Huilong Poughkeepsie, US 687 12401

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