ETCHING SOLUTION COMPOSITION FOR TUNGSTEN LAYER, METHOD FOR PREPARING ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE
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United States of America Patent
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Jun 15, 2017
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Sep 8, 2016
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Dec 11, 2015
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Abstract
The present disclosure relates to an etching solution composition for a tungsten layer including N-methylmorpholine N-oxide and water, which is effective in selectively etching only a tungsten-based metal without etching a titanium nitride-based metal or a titanium aluminum carbide layer.
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