Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
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United States of America Patent
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Jan 9, 2018
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N/A
app pub date -
Mar 30, 2015
filing date -
Mar 30, 2014
priority date (Note) -
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Abstract
In order to form a fine mask pattern with high accuracy, in a mask blank in which a light-semitransmissive film, a light shielding film, and a hard mask film are laminated in the stated order on a transparent substrate, the light-semitransmissive film containing silicon and additionally nitrogen, the hard mask film containing silicon or tantalum, and additionally oxygen, the light shielding film having the laminate structure of a lower layer, an intermediate layer, and an upper layer and containing chromium, conditions on the light shielding film are adjusted so that etching rates using a mixture gas of chlorine and oxygen are the lowest for the upper layer and the next lowest for the lower layer.
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