Importance

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Abstract

The present invention provides a manufacturing method for an array substrate including: forming a gate electrode; forming a gate insulation layer on the substrate and the first metal layer, and forming an oxide semiconductor layer on the gate insulation layer which is orthographically projected on the gate electrode; providing a photoresist layer on the oxide semiconductor layer; at two sides of the channel region of the oxide semiconductor layer are respectively a first oxide semiconductor layer and a second oxide semiconductor layer; performing a plasma treatment to the first and the second oxide semiconductor layer disposing with the photoresist layer; removing the photoresist layer; forming an etching stopper layer on the substrate; forming a source electrode and a drain electrode of the array substrate, wherein, the source electrode is contacted with the first oxide conductor layer and the drain electrode is contacted with the second oxide conductor layer.

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First Claim