Light emitting diode structure

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10693037
APP PUB NO 20170170361A1
SERIAL NO

15434075

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A light emitting diode structure includes a first type semiconductor layer, a second type semiconductor layer, an active layer disposed therebetween, and a reflective stacked layer. The reflective stacked layer includes a first reflective layer and a second reflective layer. The first reflective layer is disposed at a side of the second type semiconductor layer opposing the active layer. The second reflective layer is disposed at a side of the first reflective layer opposing the second type semiconductor layer, and extends along a side surface of the first reflective layer to a surface of the second type semiconductor layer. A vertical projection area of the second reflective layer on the second-type semiconductor layer is greater than that of the first reflective layer thereon. The second reflective layer has a better resistance to migration than the first reflective layer.

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Patent Owner(s)

Patent OwnerAddress
LEXTAR ELECTRONICS CORPORATION6F NO 21 LIXING RD HSINCHU SCIENCE PARK HSINCHU 300094

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kuo, Shiou-Yi Kaohsiung, TW 53 106
Lai, Shih-Huan Changhua County, TW 5 39

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