METHODS FOR TRAPPING ELECTRONS AT AN INTERFACE OF INSULATORS EACH HAVING AN ARBITRARY THICKNESS AND DEVICES THEREOF

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United States of America Patent

SERIAL NO

15372852

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Abstract

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A method for trapping electrons includes providing an insulator structure comprising at least two insulator layers. Two or more spaced apart electrical contacts to an interface between the at least two insulator layers are formed. An electrical bias is formed for a period of time across the two or more spaced apart electrical contacts in the insulator structure to fill electron traps at the interface between the at least two insulator layers.

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Patent Owner(s)

Patent OwnerAddress
NTH TECH CORPORATION1759 BEULAH ROAD CHURCHVILLE NY 14428

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Potter, Michael D Churchville, US 89 1568

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