METHOD OF PRODUCING SILICON CARBIDE EPITAXIAL SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE
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United States of America Patent
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Feb 27, 2017
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Sep 22, 2014
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Abstract
A method of producing a silicon carbide epitaxial substrate includes steps of: preparing a silicon carbide substrate; and forming a silicon carbide layer on the silicon carbide substrate. In this production method, in the step of forming the silicon carbide layer, a step of growing an epitaxial layer and a step of polishing a surface of the epitaxial layer are repeated twice or more.
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