Method for manufacturing nitride crystal substrate and substrate for crystal growth

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United States of America Patent

PATENT NO 10260165
APP PUB NO 20170191186A1
SERIAL NO

15398319

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Abstract

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There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.

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Patent Owner(s)

  • OSAKA UNIVERSITY; SCIOCS COMPANY LIMITED; SUMITOMO CHEMICAL COMPANY LIMITED

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Imade, Mamoru Suita, JP 15 67
Imanishi, Masayuki Suita, JP 70 639
Mori, Yusuke Suita, JP 191 862
Shibata, Masatomo Hitachi, JP 45 728
Yoshida, Takehiro Hitachi, JP 300 2671
Yoshimura, Masashi Suita, JP 89 620

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