CRUCIBLE FOR GROWING CRYSTALS

Number of patents in Portfolio can not be more than 2000

United States of America Patent

SERIAL NO

15323246

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Abstract

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Crucible for growing single crystals, formed from W, Mo, Re, an alloy or a base alloy of these metals, and a process for producing a crucible (2), wherein at least part of an outwardly facing outer face (4) of the crucible (2) has, at least in certain regions, a profile with a mean profile depth (a) of between 5 and 500 μm.

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Patent Owner(s)

Patent OwnerAddress
PLANSEE SEREUTTE TYROL A-6600
PLANSEE (SHANGHAI) HIGH PERFORMANCE MATERIAL LTD555 YITIAN ROAD PUDONG LINGANG HEAVY EQUIPMENT INDUSTRIAL ZONE PUDONG NEW AREA SHANGHAI 201306 SHANGHAI CITY SHANGHAI CITY 201306

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHENG, David Shanghai, CN 71 5423
EBERLE, Wolfgang Heiterwang, AT 24 204
HAMMERLE, Walter Reutte, AT 2 1
HOCHSTRASSER, Mathias Shanghai, CN 1 1
KLEINPASS, Bernd Pfronten, DE 6 3
LARCHER, Heike Bach, DE 2 2
WEBHOFER, Martin Pflach, AT 1 1

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