Controlled confined lateral III-V epitaxy

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United States of America Patent

PATENT NO 9748098
APP PUB NO 20170194145A1
SERIAL NO

15237114

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After forming a seed layer over a first end of a sacrificial semiconductor layer composed of silicon germanium, a remaining portion of the sacrificial semiconductor layer is removed to provide a trench. Next, a semiconductor barrier layer is formed on a sidewall of the seed layer that is exposed by the trench. A III-V compound semiconductor layer is formed within the trench by a lateral epitaxial semiconductor regrowth process.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Balakrishnan, Karthik White Plains, US 335 2038
Czornomaz, Lukas Zurich, CH 60 411
Hashemi, Pouya White Plains, US 600 4483
Reznicek, Alexander Troy, US 1407 11211

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