Embedded security circuit formed by directed self-assembly
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United States of America Patent
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Mar 13, 2018
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app pub date -
Dec 30, 2015
filing date -
Dec 30, 2015
priority date (Note) -
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Abstract
Embedded security circuits formed by directed self-assembly and methods for creating the same are provided herein. An example integrated circuit includes a set of one or more fin field effect transistor devices unrelated to one or more security devices of the integrated circuit; and an embedded security circuit structure comprising an array of fin field effect transistor devices related to the one or more security devices of the integrated circuit, wherein the array comprises a combination of (i) one or more fin field effect transistor devices with unbroken fin channels and (ii) one or more fin field effect transistor devices with broken fin channels, and wherein the combination forms a distinct code to be associated with the integrated circuit.
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