Stacked nanowire semiconductor device

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United States of America Patent

PATENT NO 10153340
APP PUB NO 20170194431A1
SERIAL NO

15396842

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Abstract

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A method for forming a semiconductor device comprising forming a stack of nanowires, the stack including a first nanowire having a first length, and a second nanowire having a second length, the second nanowire arranged above the first nanowire, forming a sacrificial gate stack on the stack of nanowires, growing a source/drain region on the first, second nanowires, removing the sacrificial gate stack to expose channel regions of the first and second nanowires, and forming a gate stack over the channel regions.

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Patent Owner(s)

  • IBM CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Guillorn, Michael A Cold Springs, US 268 5035
Nicoll, William L Pleasant Valley, US 8 14
Wang, Hanfei White Plains, US 7 23

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