NiPt AND Ti INTERSECTING SILICIDE PROCESS AND STRUCTURE
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United States of America Patent
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Jan 6, 2016
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Jan 6, 2016
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Abstract
A method includes forming a first silicide on a substrate after patterning a gate and spacer onto the substrate. A film is deposited over the substrate. A portion of the dielectric film is removed to expose the first silicide. A portion of the first silicide is removed to form a punch through region. A liner is deposited in the punch through region. A metal layer is deposited on the liner. The substrate is annealed to form a second silicide on the substrate.
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