SUBSTRATE PROCESSING APPARATUS

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United States of America Patent

APP PUB NO 20170198391A1
SERIAL NO

15073951

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A technique for performing high-temperature substrate processing includes a plurality of chambers where substrates are processed, wherein the chambers are disposed adjacent to one another; a gas supply unit configured to alternately supply first and second gasses to each of the chambers; a first exhaust pipe installed in each of the chambers and configured to exhaust the first and second gasses; a first heater installed at the first exhaust pipe and configured to heat the first exhaust pipe to a temperature higher than a temperature whereat a source of the first gas is vaporized under vapor pressure; an electronic box installed at each of the chambers, wherein the electronic box is disposed adjacent to a gas box accommodating a portion of the first exhaust pipe; and a thermal reduction structure surrounding the first exhaust pipe and configured to reduce heat from the first heater being conducted to the electronic box.

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Patent Owner(s)

Patent OwnerAddress
HITACHI KOKUSAI ELECTRIC INC15-12 NISHI-SHIMBASHI 2-CHOME MINATO-KU TOKYO 105-8039

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
ASHIHARA, Hiroshi Toyama-shi, JP 71 2058

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