3D vertical NAND semiconductor memory device and methods thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10062438
APP PUB NO 20170199705A1
SERIAL NO

15230857

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Abstract

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A controller controls a memory including first and second strings. The first and second strings configure first and second string groups, respectively. In each string group, a set of memory cell transistors each from each string configures a unit. The controller is configured to: sequentially write, in the first string group, data in first units to which serially-coupled memory cell transistors respectively belong; sequentially write, in the second string group, data in first units to which serially-coupled memory cell transistors respectively belong; and sequentially write, in the first string group, data in second units to which serially-coupled memory cell transistors respectively belong.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujita, Shirou Kamakura-shi, JP 17 147
Hara, Tokumasa Kawasaki-shi, JP 112 836
Magaki, Ikuo Kawasaki-shi, JP 13 43
Sukegawa, Hiroshi Tokyo, JP 138 3554

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