MANUFACTURING METHOD OF MEMORY DEVICE
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United States of America Patent
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app pub date -
Jun 14, 2016
filing date -
Jan 7, 2016
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Abandoned
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Abstract
A manufacturing method for a memory device includes forming a stack structure over a substrate, forming a mask pattern over the stack structure, forming a first vertical hole by patterning the stack structure using the mask pattern, implanting a dopant into a sidewall of the first vertical hole to form a first region, wherein the first region is exposed by the mask pattern; and removing the first region to form a second vertical hole.
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