CAPACITOR OF SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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May 6, 2016
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Jan 11, 2016
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Abstract
Provided are a capacitor of a semiconductor integrated circuit and a method for manufacturing the same, for example a metal-insulator-metal (MIM) type capacitor of a semiconductor integrated circuit, which is capable of improving adhesive force between an electrode layer and a dielectric layer of a capacitor, and a method for manufacturing the same. For example, the present disclosure provides a capacitor for a semiconductor integrated circuit having a new structure, which is capable of preventing a delamination phenomenon on an interface between a lower electrode layer and a dielectric layer by further forming a buffer layer, which is capable of decreasing or compensating for a difference in a coefficient of thermal expansion, between a metal electrode layer and a dielectric layer, particularly, between the lower electrode layer and the dielectric layer, and a method for manufacturing the same.
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