SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Jul 13, 2017
app pub date -
Jan 11, 2016
filing date -
Jan 11, 2016
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A semiconductor device is provided. The Semiconductor device includes a first active fin and a second active fin disposed on a substrate. A first gate electrode intersects the first active fin. A second gate electrode intersects the second active fin. A first gate insulation layer includes a first high dielectric constant insulation layer. The first gate insulation layer is disposed between the first gate electrode and the first active fin. A second gate insulation layer includes a second high dielectric constant insulation layer. The second gate insulation layer is disposed between the second gate electrode and the second active fin. A thickness of the first high dielectric constant insulation layer is thicker than a thickness of the second high dielectric constant insulation layer.
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