INTEGRATED CIRCUITS WITH HIGH VOLTAGE AND HIGH DENSITY CAPACITORS AND METHODS OF PRODUCING THE SAME

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United States of America Patent

SERIAL NO

14995949

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Abstract

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Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a high voltage capacitor having a first high voltage plate, a second high voltage plate directly overlying the first high voltage plate, and a high voltage dielectric film between the first and second high voltage plates. The integrated circuit also includes a high density capacitor with a first high density plate that is about co-planar with the second high voltage plate, a second high density plate directly overlying the first high density plate, and a thin high density dielectric film positioned between the first and second high density plates.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES SINGAPORE PTE LTD60 WOODLANDS INDUSTRIAL PARK D STREET 2 SINGAPORE 738406

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Oon, Boon Guan Singapore, SG 2 0
See, Guan Huei Singapore, SG 67 203
Verma, Purakh Raj Singapore, SG 156 948
Wang, Yuzhan Singapore, SG 3 3
Yu, Bo Singapore, SG 288 1714
Zhang, Shaoqiang Singapore, SG 31 189

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