SEMICONDUCTOR MULTILAYER STRUCTURE
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United States of America Patent
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Apr 3, 2017
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Apr 3, 2015
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Abstract
The present invention is directed to a semiconductor multilayer structure. A semiconductor multilayer structure comprises a silicon substrate, a buffer layer deposited on the silicon substrate, and the buffer layer is an aluminum contained nitride buffer layer; a superlattice layer deposited on the buffer layer, wherein the superlattice layer comprises at least a gallium nitride layer and at least a aluminum nitride layer stacked together in order, and a diffusion layer formed between the aluminum nitride layer and the gallium nitride layer, wherein the diffusion layer is an aluminum gallium nitride layer; and a epitaxy layer deposited on the superlattice layer. By utilizing the present invention, the lattice mismatch between MN and GaN of the superlattice layer can be reduced, and efficiently accumulated can be maintained without causing relaxation.
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