METHOD OF MANUFACTURING THIN-FILM TRANSISTOR SUBSTRATE
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United States of America Patent
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Jun 2, 2015
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Jun 3, 2014
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Abstract
A method of manufacturing a TFT substrate that includes a thin-film transistor having an oxide semiconductor layer includes forming a source line above a substrate 2, the source line being a copper line including a stacked film of a copper film and a cap film on the copper film, depositing an insulating layer on the source line, and performing heat treatment at a temperature over 290° C. after the deposition of the insulating layer. The depositing of the insulating layer includes depositing a first silicon oxide film at 290° C. or lower, and depositing a second silicon oxide film above the first silicon oxide film at 290° C. or lower. A total film thickness of the first silicon oxide film and the second silicon oxide film is 460 nm or more.
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