Structure for transistor switching speed improvement utilizing polar elastomers
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United States of America Patent
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Jul 17, 2018
Grant Date -
Jul 20, 2017
app pub date -
Jan 12, 2017
filing date -
Jan 15, 2016
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Abstract
An organic thin film transistor comprising a first gate, a second gate, a semiconducting layer located between the first gate and second gate and configured to operate as a channel and a source electrode and a drain electrode connected to opposing sides of the semiconductor layer. The organic thin film transistor also comprises a first dielectric layer located between the first gate and the semiconducting layer in a direction of current flow through the semiconductor layer, the first dielectric layer comprising a polar elastomeric dielectric material that exhibits a double layer charging effect when a set voltage is applied to the first gate and a second dielectric layer located between the second gate and the semiconducting layer.
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- CORNING INCORPORATED
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- [Patents Count]
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Enicks, Darwin Gene | O'Fallon, US | 17 | 228 |
He, Mingqian | Horseheads, US | 88 | 434 |
Manley, Robert George | Vestal, US | 46 | 597 |
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