SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Jul 27, 2017
app pub date -
Apr 6, 2017
filing date -
May 22, 2014
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Abstract
A manufacturing method of a semiconductor structure includes the following steps. A first isolation layer is formed on a first surface of a wafer substrate. A conductive pad is formed on the first isolation layer. A hollow region through the first surface and a second surface of the wafer substrate is formed, such that the first isolation layer is exposed through the hollow region. A laser etching treatment is performed on the first isolation layer that is exposed through the hollow region, such that a first opening is formed in the first isolation layer, and a concave portion exposed through the first opening is formed in the conductive pad.
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