SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Jul 27, 2017
app pub date -
Mar 11, 2016
filing date -
Jan 22, 2016
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Abstract
A semiconductor memory device includes a substrate, a stack disposed on the substrate, a vertical channel structure penetrating the stack, and a fixed charge layer disposed in the vertical channel structure. The stack includes insulating patterns and gate electrodes alternately and repeatedly disposed on one another. The vertical channel structure includes a data storing pattern.
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