GATE DRIVING CIRCUIT

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United States of America Patent

SERIAL NO

15138434

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Abstract

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This disclosure provides a gate driving circuit, which comprises: first P-channel, second P-channel, first N-channel and second N-channel transistors, each has a gate, a source, a drain, and a base connected to the source; an output terminal electrically connected to the drains of the second N-channel and P-channel transistors; wherein the source of the first P-channel transistor is connected to a first voltage source, and a first voltage is applied to its gate; the source of the first N-channel transistor is connected to a second voltage source, and a second voltage is applied to its gate; the source of the second P-channel transistor is connected to the drain of the first P-channel transistor, and a third voltage is applied to its gate; the source of the second N-channel transistor is connected to the drain of the first N-channel transistor, and a control voltage is applied to its gate.

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Patent Owner(s)

Patent OwnerAddress
SITRONIX TECHNOLOGY CORPORATION11F-1 NO 5 TAIYUAN 1ST ST JHUBEI CITY HSINCHU COUNTY 302

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LU, HUNG-YU Jhubei City, TW 8 8

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