Method for manufacturing SiC epitaxial wafer and SiC epitaxial wafer

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United States of America Patent

PATENT NO 10269554
APP PUB NO 20170221697A1
SERIAL NO

15329363

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Abstract

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In order to reduce edge defects efficiently and sufficiently, a method for manufacturing a SiC epitaxial wafer according to the present invention is a method for manufacturing a SiC epitaxial wafer that forms a SiC epitaxial layer on top of a SiC single crystal substrate having an off angle, and includes a rough polishing step for subjecting an outer circumferential edge on a starting side of step-flow growth in the SiC single crystal substrate to rough polishing before forming the SiC epitaxial layer; and a final polishing step for further polishing for finish.

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Patent Owner(s)

  • EC-SHOWA DENKO K.K.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sasaki, Yuzo Hikone, JP 30 201
Sugano, Susumu Hikone, JP 7 58

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