Method of Manufacturing Semiconductor Devices Including Deposition of Crystalline Silicon in Trenches

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United States of America Patent

SERIAL NO

15417939

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Abstract

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Trenches are formed in a semiconductor layer of a semiconductor substrate. A mixture that contains trichlorosilane and hydrogen gas is fed into a process chamber containing the semiconductor substrate. A barometric pressure in the process chamber is at least 50% of standard atmosphere. The trenches are filled with epitaxially deposited crystalline silicon.

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Patent Owner(s)

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INFINEON TECHNOLOGIES AUSTRIA AGSIEMENSSTRASSE 2 VILLACH 9500

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baumgartl, Johannes Riegersdorf, AT 41 49
Kuenle, Matthias Villach, AT 17 13

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