Method of Manufacturing Semiconductor Devices Including Deposition of Crystalline Silicon in Trenches
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United States of America Patent
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Jan 27, 2017
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Jan 28, 2016
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Abstract
Trenches are formed in a semiconductor layer of a semiconductor substrate. A mixture that contains trichlorosilane and hydrogen gas is fed into a process chamber containing the semiconductor substrate. A barometric pressure in the process chamber is at least 50% of standard atmosphere. The trenches are filled with epitaxially deposited crystalline silicon.
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