APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL AND METHOD OF MANUFACTURING SiC SINGLE CRYSTAL

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United States of America Patent

SERIAL NO

15515175

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Abstract

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A method and apparatus for manufacturing an SiC single crystal includes a graphite crucible for receiving an SiC solution with first and second induction heating coils wound around it. The first induction heating coil is located higher than the surface of the SiC solution. The second induction heating coil is located lower than the first induction heating coil. A power supply supplies a first alternating current to the first induction heating coil and supplies, to the second induction heating coil, a second alternating current having the same frequency as the first alternating current and flowing in the direction opposite to that of the first alternating current. The distance between the surface of the SiC solution and the position in the portion of the side wall of the crucible in contact with the SiC solution with the strength of a magnetic field at its maximum satisfies a predetermined equation.

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Patent Owner(s)

Patent OwnerAddress
TOYOTA JIDOSHA KABUSHIKI KAISHA1 TOYOTA-CHO TOYOTA-SHI AICHI-KEN 471-857
NIPPON STEEL & SUMITOMO METAL CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
DAIKOKU, Hironori Susono-shi, Shizuoka, JP 31 39
DOI, Masayoshi Nagoya-shi, Aichi, JP 10 2
KAMEI, Kazuhito Kitakyushu-shi, Fukuoka, JP 38 152
KISHIDA, Yutaka Chiba-shi, Chiba, JP 15 16

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