Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces

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United States of America Patent

PATENT NO 10727073
APP PUB NO 20170229314A1
SERIAL NO

15423486

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Abstract

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Methods and apparatuses for etching semiconductor material on substrates using atomic layer etching by chemisorption, by deposition, or by both chemisorption and deposition mechanisms in combination with oxide passivation are described herein. Methods involving atomic layer etching using a chemisorption mechanism involve exposing the semiconductor material to chlorine to chemisorb chlorine onto the substrate surface and exposing the modified surface to argon to remove the modified surface. Methods involving atomic layer etching using a deposition mechanism involve exposing the semiconductor material to a sulfur-containing gas and hydrogen to deposit and thereby modify the substrate surface and removing the modified surface.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kanarik, Keren Jacobs Los Altos, US 35 2070
Lill, Thorsten Santa Clara, US 99 3358
Pan, Yang Los Altos, US 290 4405
Tan, Samantha Fremont, US 48 3090
Yang, Wenbing Fremont, US 33 1103

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